bi-directional triode thyristor symbol STF8A80 2.t2 features repetitive peak off-state voltage : 800v r.m.s on-state current ( i t(rms) = 8 a ) high commutation dv/dt isolation voltage ( v iso = 1500v ac ) to-220f 3.gate 1.t1 general description this device is fully isolated package suitable for ac switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. this device is approved to comply with applicable require- ments by underwriters laboratories inc. 1 2 3 absolute maximum ratings symbol v drm i t(rms) i tsm i 2 t p gm p g(av) i gm v gm v iso t j t stg ( t j = 25 c unless otherwise specified ) condition ratings 800 t c = 89 c one cycle, 50hz/60hz, peak, non-repetitive 8.0 80/88 32 5.0 0.5 2.0 10 a.c. 1 minute 1500 - 40 ~ 125 - 40 ~ 150 2.0 parameter repetitive peak off-state voltage r.m.s on-state current surge on-state current i 2 t peak gate power dissipation average gate power dissipation peak gate current peak gate voltage isolation breakdown voltage(r.m.s.) operating junction temperature storage temperature mass units v a a a 2 s w w a v v c c g aug, 2008. rev. a copyright@winsemi semiconductor co., ltd., all rights reserved. 1/5 www..net
STF8A80 electrical characteristics symbol items repetitive peak off-state current peak on-state voltage non-trigger gate voltage critical rate of rise off-state voltage at commutation holding current thermal impedance junction to case t j = 125 c, v d = 1/2 v drm t j = 125 c, [di/dt]c = -4.0 a/ms, v d =2/3 v drm gate trigger voltage v d = 6 v, r l =10 gate trigger current v d = 6 v, r l =10 conditions v d = v drm , single phase, half wave t j = 125 c i t = 12 a, inst. measurement ratings min. 0.2 10 typ. 15 max. 2.0 1.4 30 30 30 1.5 1.5 1.5 3.7 unit i drm v tm i +gt1 i -gt1 i -gt3 v +gt1 v -gt1 v -gt3 v gd (dv/dt)c i h r th(j-c) ma v ma v v v/ ? ma c/w 2/5
STF8A80 fig 1. gate characteristics 10 2 fig 2. on-state voltage 10 1 v gm (10v) on-state current [a] gate voltage [v] p gm (5w) p g(av) (0.5w) 25 10 0 10 1 t j = 125 c o i gm (2a) t j = 25 c 10 0 o 10 -1 v gd (0.2v) 1 10 10 2 10 3 0.5 1.0 1.5 2.0 2.5 3.0 3.5 gate current [ma] on-state voltage [v] fig 3. on state current vs. maximum power dissipation 10 9 fig 4. on state current vs. allowable case temperature o power dissipation [w] 8 7 360 2 allowable case temperature [ o c] = 180 o = 150 o = 120 = 90 = 60 o o 130 120 6 5 4 3 2 1 0 0 110 : conduction angle = 30 100 o o = 30 o 360 2 90 : conduction angle 80 = 60 o = 90 o = 120 o = 150 o = 180 5 6 7 8 9 10 1 2 rms on-state current [a] 3 4 5 6 7 8 9 10 0 1 2 3 4 rms on-state current [a] fig 5. surge on-state current rating ( non-repetitive ) 100 fig 6. gate trigger voltage vs. junction temperature 10 surge on-state current [a] 80 60hz v v gt (25 c) v gt (t c) v 1 o 60 + gt1 _ gt1 _ gt3 v 40 50hz 20 o 0 0 10 10 1 10 2 0.1 -50 0 50 100 o 150 time (cycles) junction temperature [ c] 3/5
STF8A80 fig 7. gate trigger current vs. junction temperature 10 10 fig 8. transient thermal impedance 1 i i + gt1 _ gt1 transient thermal impedance [ c/w] i gt (25 c) i gt (t c) o o o 1 i 0.1 -50 _ gt3 0 50 100 o 150 0.1 -2 10 10 -1 10 0 10 1 10 2 junction temperature [ c] time (sec) fig 9. gate trigger characteristics test circuit 10 ? 10 ? 10 ? 6v a r g 6v a r g 6v a v v v r g test procedure test procedure test procedure 4/5
STF8A80 to-220f package dimension mm typ. inch typ. dim. a b c d e f g h i j k l m n o min. 10.4 6.18 9.55 13.47 6.05 1.26 3.17 1.87 2.57 max. 10.6 6.44 9.81 13.73 6.15 1.36 3.43 2.13 2.83 min. 0.409 0.243 0.376 0.530 0.238 0.050 0.125 0.074 0.101 max. 0.417 0.254 0.386 0.540 0.242 0.054 0.135 0.084 0.111 2.54 5.08 2.51 1.25 0.45 0.6 3.7 3.2 1.5 2.62 1.55 0.63 1.0 0.099 0.049 0.018 0.024 0.100 0.200 0.103 0.061 0.025 0.039 0.146 0.126 0.059 1 2 f b a e h i 1 2 c l 1 d 2 3 j k m g 1. t1 2. t2 3. gate n o 5/5
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